High-Spatial-Resolution Studies of UV-Laser-Damage Morphology in SiO2 Thin Films with Artificial Defects
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چکیده
LLE Review, Volume 101 23 Introduction The importance of conducting a quantitative, high-spatialresolution investigation of thin-film-damage morphology is twofold. First, comparison of spatial frequencies of the damaged site with the surrounding unmodified material may indicate the presence of particular processes in the damage event. For instance, a smooth surface that is missing granular film structure usually points to melting of thin-film material. Second, experimental data on geometry (lateral size, depth, crosssectional profiles, volume) of the modified material provide vital information for theoretical-model validation.
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